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LM50CIM3X SOT-23 Single-Supply Centigrade Temperature SensorLM50CIM3X SOT-23 Single-Supply Centigrade Temperature Sensor
IRFP150NPBF Transistor N-MOSFET, unipolar, 100V, 30A, 160W, TO247ACIRFP150NPBF Transistor N-MOSFET, unipolar, 100V, 30A, 160W, TO247AC
IRF9520NPBF Transistor: P-MOSFET; unipolar; -100V; -6.8A; 48W; TO220ABIRF9520NPBF Transistor: P-MOSFET; unipolar; -100V; -6.8A; 48W; TO220AB
S4003LS3 SILICON CONTROLLED RECTIFIER,600V V(DRM),8A I(T),TO-202S4003LS3 SILICON CONTROLLED RECTIFIER,600V V(DRM),8A I(T),TO-202
TC74A5-5.0VAT Sensor de temeperatura, serial output, -40÷125°C, TO220-5TC74A5-5.0VAT Sensor de temeperatura, serial output, -40÷125°C, TO220-5
STGP19NC60HD Transistor IGBT N-channel 600V - 19A - To-220 Ultra fast PowermeshSTGP19NC60HD Transistor IGBT N-channel 600V - 19A - To-220 Ultra fast Powermesh
SPA11N80C3 Transistor N-MOSFET, unipolar, 800V, 11A, 34W, PG-TO220-3-FPSPA11N80C3 Transistor N-MOSFET, unipolar, 800V, 11A, 34W, PG-TO220-3-FP
AUIRFB4610 Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220ABAUIRFB4610 Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
TOP225YN Circuito integrado PMIC, CA/CC switcher, 90-110kHz, TO220-3, 6.4ΩTOP225YN Circuito integrado PMIC, CA/CC switcher, 90-110kHz, TO220-3, 6.4Ω
BSS138 Transistor metal-oxido-semiconductor de efecto de campo (BSS138 Transistor metal-oxido-semiconductor de efecto de campo (
2SK3683-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET2SK3683-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
MJ11015 Transistor: PNP; bipolar; Darlington; 120V; 30A; 200W; TO3MJ11015 Transistor: PNP; bipolar; Darlington; 120V; 30A; 200W; TO3
HGTG27N120BN Transistpr IGBT 72A, 1200V, NPT Series N-ChannelHGTG27N120BN Transistpr IGBT 72A, 1200V, NPT Series N-Channel
FDP3632 Transistor N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Through Hole TO-22FDP3632 Transistor N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Through Hole TO-22
RHRG75120 Diode Standard 1200V (1.2kV) 75A Through Hole TO-247RHRG75120 Diode Standard 1200V (1.2kV) 75A Through Hole TO-247
2N2905A. General Purpose Transistor. Page 1. 31/05/05 V1.0. High2N2905A. General Purpose Transistor. Page 1. 31/05/05 V1.0. High
VN920-E Driver; high-side switch; 30A; Canales:1; Pentawatt; 5,5÷36VVN920-E Driver; high-side switch; 30A; Canales:1; Pentawatt; 5,5÷36V
55.12.9.012.0000 Relay electromagnético DPDT, 12VDC, 8 pines, máx: 20A55.12.9.012.0000 Relay electromagnético DPDT, 12VDC, 8 pines, máx: 20A
HGTG10N120BND Transistor 35A, 1200V, NPT Series N-Channel IGBTHGTG10N120BND Transistor 35A, 1200V, NPT Series N-Channel IGBT
STW9N150 Transistor N-MOSFET, unipolar, 1500V, 5A, 320W, TO247, Marca: STSTW9N150 Transistor N-MOSFET, unipolar, 1500V, 5A, 320W, TO247, Marca: ST
FQPF4N90C 4N90C Mosfet Canal N Orificio pasante 900V, 4A (Tc) 47W (Tc) TO-220F-3FQPF4N90C 4N90C Mosfet Canal N Orificio pasante 900V, 4A (Tc) 47W (Tc) TO-220F-3
MJ11016 Transistor: NPN; bipolar; Darlington; 120V; 30A; 200W; TO3MJ11016 Transistor: NPN; bipolar; Darlington; 120V; 30A; 200W; TO3

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