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2MBI450U4E-120 Modulo IGBT Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, Marca: Fuji Electric

FABRICANTE:
PART# Model:2MBI450U4E-120
STOCK:3
COTIZAR: 2MBI450U4E-120
PRECIO:-

2MBI450U4E-120 Modulo IGBT Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, Marca: Fuji Electric

DESCRIPCIÓN

Modulo IGBT Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, Marca: Fuji Electric

FICHA TECNICA

Data Sheet 2MBI450U4E

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