IRF7309PBF Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1,4W; SO8

JavaScript seems to be disabled in your browser.

You must have JavaScript enabled in your browser to utilize the functionality of this website.
Click here for instructions on enabling javascript in your browser.

Fabricante	Infineon (IRF)
Tipo de transistor	N/P-MOSFET
Tecnología	HEXFET®
Polarización	unipolar
Tensión drenaje-fuente	30/-30V
Corriente del drenaje	4/-3A
Poder disipado	1.4W
Carcasa	SO8
Tensión puerta-fuente	±20V
Resistencia en estado de transferencia	50/100mΩ
Montaje	SMD
Carga de puerta	16.7/16.7nC