¿Qué hay en mi Carrito?

  Producto Existencias Cantidad
FF150R12KT3G Modulo IGBT with fast TRENCHSTOP™ 150A; 1200V, switch; end Emitter Controlled high efficiency diode; Marca: Infineon FF150R12KT3G Modulo IGBT with fast TRENCHSTOP™ 150A; 1200V, switch; end Emitter Controlled high efficiency diode; Marca: Infineon 
SB860 Diodo rectificador de barrera Schottky, 60V, 8ASB860 Diodo rectificador de barrera Schottky, 60V, 8A
SKKH106/16E Módulo SCR Doble serial, 106A, 1600Volt, SEMIPACK1SKKH106/16E Módulo SCR Doble serial, 106A, 1600Volt, SEMIPACK1
MCD132-08IO1 Módulo Thyristor, SCR, MCD132-08io1, Encapsulado Y4 M6, 5-PinesMCD132-08IO1 Módulo Thyristor, SCR, MCD132-08io1, Encapsulado Y4 M6, 5-Pines
SKT760/18E Thyristor tipo capsula 760Amp, 1800Volt, 1.6kA, 200mASKT760/18E Thyristor tipo capsula 760Amp, 1800Volt, 1.6kA, 200mA
SEMiX453GAL12E4s IGBT Half-Bridge Ultrarrápido, 683A, 1200V, SEMITRANSSEMiX453GAL12E4s IGBT Half-Bridge Ultrarrápido, 683A, 1200V, SEMITRANS
N0734YS160 Thyrsitor Tipo Capsula 734A/1600V - 55ºC / Igt:150mA / Vgt:3V / dv/dt: 1000V/us / di/dt: 500A/us / Tq: 100us /N0734YS160 Thyrsitor Tipo Capsula 734A/1600V - 55ºC / Igt:150mA / Vgt:3V / dv/dt: 1000V/us / di/dt: 500A/us / Tq: 100us /
SKKT132/16E MODULO THYRISTOR SEMIPACK2, 130A, 1600VSKKT132/16E MODULO THYRISTOR SEMIPACK2, 130A, 1600V
MCC44-16io1B Módulo Doble Thyristor 1600V, 49A, TO-240AA, 100mAMCC44-16io1B Módulo Doble Thyristor 1600V, 49A, TO-240AA, 100mA
CM150DY-12NF Modulo IGBT Transistor 150A, 1,7V, 590W, 600VCM150DY-12NF Modulo IGBT Transistor 150A, 1,7V, 590W, 600V
CM50MD-12H MODULO IGBT APPLICATION. AC & DC motor controlsCM50MD-12H MODULO IGBT APPLICATION. AC & DC motor controls
BSM200GA170DN2S_E3256 Modulo IGBT BSM200GA170DN2S_E3256 1700V 200A EupecBSM200GA170DN2S_E3256 Modulo IGBT BSM200GA170DN2S_E3256 1700V 200A Eupec
SKKT330/16E MODULO THYRISTOR, DUAL, 1600V, 305ASKKT330/16E MODULO THYRISTOR, DUAL, 1600V, 305A
SKKD100/16 Módulo Doble Diodo 100A, 1600Voltios, SEMIPACK1SKKD100/16 Módulo Doble Diodo 100A, 1600Voltios, SEMIPACK1
MG300J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL 1GBTMG300J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL 1GBT
SKIIP 28AHB16V4 Modulo IGBT 28A, 1600VSKIIP 28AHB16V4 Modulo IGBT 28A, 1600V
KP1200 1800V Thyristor Phase control, tipo capsula, 1200A, 1800V, 74x26mm, TechSemKP1200 1800V Thyristor Phase control, tipo capsula, 1200A, 1800V, 74x26mm, TechSem
SKM200GB128D MODULO IGBT 300A 1200V, SEMITRANS3SKM200GB128D MODULO IGBT 300A 1200V, SEMITRANS3
JGXX40150 Relé industrial de estado sólido 150A, 400VJGXX40150 Relé industrial de estado sólido 150A, 400V
SKKD260/16 Modulo Diodo Semipack 260A, 1200V, SemikronSKKD260/16 Modulo Diodo Semipack 260A, 1200V, Semikron
SKM300GB12T4 Módulo IGBT, Medio Puente, 422A, 1200V, 175°C, SemikronSKM300GB12T4 Módulo IGBT, Medio Puente, 422A, 1200V, 175°C, Semikron
DF75AA160 DIODE(THREE PHASES BRIDGE TYPE) DF75A, 75A, 1600, SANREXDF75AA160 DIODE(THREE PHASES BRIDGE TYPE) DF75A, 75A, 1600, SANREX
A50L-0001-0103 EVL31-060 Modulo Transistor Darlington 100A / 600VA50L-0001-0103 EVL31-060 Modulo Transistor Darlington 100A / 600V
SKB72/18 Puente rectificador trifásico, 1.8kV, 70A, SEMIPONT3SKB72/18 Puente rectificador trifásico, 1.8kV, 70A, SEMIPONT3
DWR40A30 Modulo THREE PHASE DIODE MODULES (HALF BRIDGE)DWR40A30 Modulo THREE PHASE DIODE MODULES (HALF BRIDGE)
4MBI340VF-120R-50 Modulo IGBT potencia 340A, 1200V, ±600V/340A/RB-IGBT, FUJI ELECTRIC4MBI340VF-120R-50 Modulo IGBT potencia 340A, 1200V, ±600V/340A/RB-IGBT, FUJI ELECTRIC
SKKT72B12E Modulo de tiristor 1200V, 80A, SEMIPACK1SKKT72B12E Modulo de tiristor 1200V, 80A, SEMIPACK1
SKIIP 13AC126V1 Modulo IGBT, M21 Array & Module Transistor, 41 A, 1.7 V, 1200VSKIIP 13AC126V1 Modulo IGBT, M21 Array & Module Transistor, 41 A, 1.7 V, 1200V
SKIIP22NAB12T19 Modulo IGBT SemiconductorSKIIP22NAB12T19 Modulo IGBT Semiconductor
SKiiP2403GB172-4DL Modulo IGBT 2400Amp. 1700Volt, 2-pack-integratedSKiiP2403GB172-4DL Modulo IGBT 2400Amp. 1700Volt, 2-pack-integrated

Realizar Pedido
Telefono