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  Producto Existencias Cantidad
T820169004DN THIRISTOR TIPO DISCO, 900A-1600VT820169004DN THIRISTOR TIPO DISCO, 900A-1600V
DDB6U104N16RR DIODE MODULE WITH CHOOPER IGBT 1600v 105ADDB6U104N16RR DIODE MODULE WITH CHOOPER IGBT 1600v 105A
SKKH273/16E Modulo Thyristor & Diodo 273Amp 1600VSKKH273/16E Modulo Thyristor & Diodo 273Amp 1600V
K229A4101 Módulo de inversor vinco K229A4101K229A4101 Módulo de inversor vinco K229A4101
IXFH34N60X2A Transistor N-MOSFET, 600V, 34A, X2-ClassIXFH34N60X2A Transistor N-MOSFET, 600V, 34A, X2-Class
95.65SMA Base Para Relay de 8 pines, 10A, 250V95.65SMA Base Para Relay de 8 pines, 10A, 250V
2A100HB12C1U Modulo IGBT Transistor 100A; 1200V; Infineon2A100HB12C1U Modulo IGBT Transistor 100A; 1200V; Infineon
IRKT250-20 Modulo SCR & SCR 250Amp, 2000V, Magn-a-pakIRKT250-20 Modulo SCR & SCR 250Amp, 2000V, Magn-a-pak
SKKE 162/16 MODULO DIODO RECTIFIER, 195A, 1.6KV, SEMIPACK 2SKKE 162/16 MODULO DIODO RECTIFIER, 195A, 1.6KV, SEMIPACK 2
TD190N16SOF Módulo thyristor-diodo 190A, 1600V, BG-PB34SB-1, Marca InfineonTD190N16SOF Módulo thyristor-diodo 190A, 1600V, BG-PB34SB-1, Marca Infineon
SKKR800/0.1-BVR MÓDULO SHUNT, 263uOHM, 5%, 18W; SEMIKRONSKKR800/0.1-BVR MÓDULO SHUNT, 263uOHM, 5%, 18W; SEMIKRON
SKVC20A460 Modulo VARISTOR SKVC 20A/460C SemikronSKVC20A460 Modulo VARISTOR SKVC 20A/460C Semikron
6MBI20GS-060 IGBT Modules. 600V / 20A 6 in one-package6MBI20GS-060 IGBT Modules. 600V / 20A 6 in one-package
VUO160-16NO7 Bridge Rectifier Three Phase Standard 160A, 1600VVUO160-16NO7 Bridge Rectifier Three Phase Standard 160A, 1600V
SKKH132/16 Modulo Thyristor 130A, 1600V, marca SemikronSKKH132/16 Modulo Thyristor 130A, 1600V, marca Semikron
A50L-0001-0103 EVL31-060 Modulo Transistor Darlington 100A / 600VA50L-0001-0103 EVL31-060 Modulo Transistor Darlington 100A / 600V
SKKD15/12 Diodo power module 1200V, 15A, SEMIPACKSKKD15/12 Diodo power module 1200V, 15A, SEMIPACK
MEE250-16DA DIODO FAST RECTIFICADOR PHASE 1600V Y4-M6 IXYSMEE250-16DA DIODO FAST RECTIFICADOR PHASE 1600V Y4-M6 IXYS
STFW4N150 Transistor N-MOSFET, unipolar, 1500V, 2.5ASTFW4N150 Transistor N-MOSFET, unipolar, 1500V, 2.5A
MPJC2CA100U60 Módulo Diodo ultraFast 100A; 600V; Marca: MagnechipMPJC2CA100U60 Módulo Diodo ultraFast 100A; 600V; Marca: Magnechip
MCC44-16io1B Módulo Doble Thyristor 1600V, 49A, TO-240AA, 100mAMCC44-16io1B Módulo Doble Thyristor 1600V, 49A, TO-240AA, 100mA
MCC95-16io1B Módulo Thyristor 95A, 1600V, marca IXYSMCC95-16io1B Módulo Thyristor 95A, 1600V, marca IXYS
PK25F-160 Modulo Thyristor 25Amp. 1600V, SanrexPK25F-160 Modulo Thyristor 25Amp. 1600V, Sanrex
CM200DXD1-24A Modulo IGBT 200A, 2400V MITSUBISHICM200DXD1-24A Modulo IGBT 200A, 2400V MITSUBISHI
7MBR30VKC060-50 Modulo. IGBT (V series). 600V / 30A / PIM7MBR30VKC060-50 Modulo. IGBT (V series). 600V / 30A / PIM
2MBI200N-120 Modulo IGBT 200A 1200V DUAL2MBI200N-120 Modulo IGBT 200A 1200V DUAL
QM50DX-H MODULO TRANSISTOR & DIODO 50A 600V; MARCA: MITSUBISHI QM50DX-H MODULO TRANSISTOR & DIODO 50A 600V; MARCA: MITSUBISHI 
YS160101-AG Thyristor SCR tipo capsula, 1600Amp, 2100V, ASEAYS160101-AG Thyristor SCR tipo capsula, 1600Amp, 2100V, ASEA
T50RIA120 100V 50A Single Circuit Phase Control Thyristor in a TT50RIA120 100V 50A Single Circuit Phase Control Thyristor in a T
MG50Q6ES41 MODULO N CHANNEL IGBT (HIGH POWER SWITCHINGMG50Q6ES41 MODULO N CHANNEL IGBT (HIGH POWER SWITCHING
HFD2/012-S-L2 Relay electromagnético, DPDT, 12VDC, 1A/125VAC, marca HongfaHFD2/012-S-L2 Relay electromagnético, DPDT, 12VDC, 1A/125VAC, marca Hongfa
KDG20N120H2 IGBT 1200V, 20AKDG20N120H2 IGBT 1200V, 20A
QCA50AA100 Transistor, dual darlington. Max voltage: 1000V. Max current: 50Amp.QCA50AA100 Transistor, dual darlington. Max voltage: 1000V. Max current: 50Amp.
2MBI300U4H-120-50 Módulo IGBT 300 A max, 1200V2MBI300U4H-120-50 Módulo IGBT 300 A max, 1200V
SKM200GB128D MODULO IGBT 300A 1200V, SEMITRANS3SKM200GB128D MODULO IGBT 300A 1200V, SEMITRANS3
TT190N16SOF Módulo Thyristores; doble serial; 1,6kV; 190A; BG-PB34SB-1TT190N16SOF Módulo Thyristores; doble serial; 1,6kV; 190A; BG-PB34SB-1
VHF28-16io5 Modulo IXYS SCR 28 Amps 1600VVHF28-16io5 Modulo IXYS SCR 28 Amps 1600V
MCR12DSMT4G SCR 600 V 12 A Sensitive Gate Surface Mount TO-252 (DPAKMCR12DSMT4G SCR 600 V 12 A Sensitive Gate Surface Mount TO-252 (DPAK
STTH802FP Rectificadores Recovery Diode Ultra FastSTTH802FP Rectificadores Recovery Diode Ultra Fast
SKKQ560/16E ASSEMBLY,AC-SWITCH,1800V,560ASKKQ560/16E ASSEMBLY,AC-SWITCH,1800V,560A
CM150RX1-12A HIGH POWER SWITCHING USE. ABSOLUTE MAXIMUM RATINGS (Tj = 25°CCM150RX1-12A HIGH POWER SWITCHING USE. ABSOLUTE MAXIMUM RATINGS (Tj = 25°C
ST330C14C0L Thyristor, SCR, VS-ST330C14C0, Encapsulado TO-200AB, 3-PinesST330C14C0L Thyristor, SCR, VS-ST330C14C0, Encapsulado TO-200AB, 3-Pines
BSM35GB120DN2 Modulo IGBT 1200V 35A DUALBSM35GB120DN2 Modulo IGBT 1200V 35A DUAL
2MBI600VXA-120E-50 Módulo M271 Series IGBT, 600 A max, 1200 V2MBI600VXA-120E-50 Módulo M271 Series IGBT, 600 A max, 1200 V
CM600DY-12NF MODULO IGBT HIGH POWER SWITCHING, 600A, 1200V, MARCA: MITSUBISHICM600DY-12NF MODULO IGBT HIGH POWER SWITCHING, 600A, 1200V, MARCA: MITSUBISHI
MCD132-08IO1 Módulo Thyristor, SCR, MCD132-08io1, Encapsulado Y4 M6, 5-PinesMCD132-08IO1 Módulo Thyristor, SCR, MCD132-08io1, Encapsulado Y4 M6, 5-Pines
T718N14TOF Thyristor tipo Disco 718A, 1400VT718N14TOF Thyristor tipo Disco 718A, 1400V
MCD200-16IO1 Módulo Thyristor y diodo 216A, 1600V, marca IXYSMCD200-16IO1 Módulo Thyristor y diodo 216A, 1600V, marca IXYS
SKM400GA124D MODULE IGBT SKM400GA124D 1200V 400ASKM400GA124D MODULE IGBT SKM400GA124D 1200V 400A
CM300DU-12F MODULO IGBT 600V, 300A, MARCA MITSUBISHICM300DU-12F MODULO IGBT 600V, 300A, MARCA MITSUBISHI
P839A3203 Modulo IGBT de alimentación VincoP839A3203 Modulo IGBT de alimentación Vinco
MCC312-16io1 Modulo Thyristor & Thyristor 312 Amps 1600VMCC312-16io1 Modulo Thyristor & Thyristor 312 Amps 1600V
MG75Q2YS40 Module Silicon N Channel IGBTMG75Q2YS40 Module Silicon N Channel IGBT
IRKT91/12 Modulo doble thyristor 90A, 1200V, Marca: I&RIRKT91/12 Modulo doble thyristor 90A, 1200V, Marca: I&R
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