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  Product Stock Qty
ALF1P12    General Purpose Relay SPST-NO (1 Form A) 12VDC Coil Through HoleALF1P12 General Purpose Relay SPST-NO (1 Form A) 12VDC Coil Through Hole
PCNH-124H3MHZF           Relay miniatura 24VDC, 4 pines, 5APCNH-124H3MHZF Relay miniatura 24VDC, 4 pines, 5A
BTB24-800BW       Triac 25A, 800V, 50mA, TO220ABBTB24-800BW Triac 25A, 800V, 50mA, TO220AB
KD221K05       Dual Darlington Transistor Module(50 Amperes / 1000 VolKD221K05 Dual Darlington Transistor Module(50 Amperes / 1000 Vol
MDD26-16N1B                 Módulo doble, diodo serial, 36Amp, 1600V, TO240AAMDD26-16N1B Módulo doble, diodo serial, 36Amp, 1600V, TO240AA
GU-SH-148DM            Relé: electromagnético; SPST-NO; Bobina 48VDC; 30A; Serie: GUGU-SH-148DM Relé: electromagnético; SPST-NO; Bobina 48VDC; 30A; Serie: GU
SPP04N80C3                     Transistor N-MOSFET, unipolar, 4A, 800V, 63W, Marca InfineonSPP04N80C3 Transistor N-MOSFET, unipolar, 4A, 800V, 63W, Marca Infineon
SKIIP 37NAB12T4V1            Módulo IGBT, 1200V, 75A, boost chopperSKIIP 37NAB12T4V1 Módulo IGBT, 1200V, 75A, boost chopper
MJ11016            Transistor NPN, bipolar, Darlington, 120V, 30A, 200W, TO3MJ11016 Transistor NPN, bipolar, Darlington, 120V, 30A, 200W, TO3
BSM75GB120DN2    Modulos IGBT 1200V 75A DUALBSM75GB120DN2 Modulos IGBT 1200V 75A DUAL
LZ-48HE                     Relay Fujitsu 48VDC, 5 Pines POWER, Marca TakamisawaLZ-48HE Relay Fujitsu 48VDC, 5 Pines POWER, Marca Takamisawa
IRF9520NPBF         Transistor: P-MOSFET; unipolar; -100V; -6.8A; 48W; TO220ABIRF9520NPBF Transistor: P-MOSFET; unipolar; -100V; -6.8A; 48W; TO220AB
SF2D-DC24V                   Relé electromagnético 24VDC, 8 Pines, SPST-NO x2 + SPST-NC x2, marca PanasonicSF2D-DC24V Relé electromagnético 24VDC, 8 Pines, SPST-NO x2 + SPST-NC x2, marca Panasonic
PM75RL1A120           Power Driver Module IGBT 3 Phase 75A, 1200V, Marca: MitsubishiPM75RL1A120 Power Driver Module IGBT 3 Phase 75A, 1200V, Marca: Mitsubishi
MPJC2CA100U60               Módulo Diodo ultraFast 100A; 600V; Marca: MagnechipMPJC2CA100U60 Módulo Diodo ultraFast 100A; 600V; Marca: Magnechip
SEMiX453GB12E4s                IGBT, MODULE, 1.2KV, 683A, SEMIX 3SSEMiX453GB12E4s IGBT, MODULE, 1.2KV, 683A, SEMIX 3S
FGL40N120AND      Transistor IGBT, 1200V, 40A, TO264FGL40N120AND Transistor IGBT, 1200V, 40A, TO264
G6RN-1 DC18        RELAY GEN PURPOSE SPDT 8A 18VG6RN-1 DC18 RELAY GEN PURPOSE SPDT 8A 18V
TD190N16SOF                 Módulo thyristor-diodo 190A, 1600V, BG-PB34SB-1, Marca InfineonTD190N16SOF Módulo thyristor-diodo 190A, 1600V, BG-PB34SB-1, Marca Infineon
G6E-134P-ST-US-DC24   Low Signal Relays - PCB NL 200mW SPDT 24VDCG6E-134P-ST-US-DC24 Low Signal Relays - PCB NL 200mW SPDT 24VDC
H7AN-4DM-AC100-240  Controladores 4-Digit 100-240 VAC up down seH7AN-4DM-AC100-240 Controladores 4-Digit 100-240 VAC up down se
SKKD81/16         Módulo diodo 1700V, 80A, doble serial, SEMIPACK1SKKD81/16 Módulo diodo 1700V, 80A, doble serial, SEMIPACK1
MEE250-16DA     DIODE FAST REC PHASE 1600V Y4-M6 IXYSMEE250-16DA DIODE FAST REC PHASE 1600V Y4-M6 IXYS
M50100SB600   Modulos de semiconductores discretosM50100SB600 Modulos de semiconductores discretos
SKKD81/14                Módulo diodo, doble serial, 80A, 1400V, SEMIPACK1SKKD81/14 Módulo diodo, doble serial, 80A, 1400V, SEMIPACK1
2N6601  Transistor NTE Equvilent NTE278 TRANSISTOR NPN SILICON 42N6601 Transistor NTE Equvilent NTE278 TRANSISTOR NPN SILICON 4
FS100R12KT4G_B11             1200 V, 100 A sixpack IGBT moduleFS100R12KT4G_B11 1200 V, 100 A sixpack IGBT module
QM150DY-HB                    Modulo IGBT 150A, HIGH POWER SWITCHING, MARCA MITSUBISHIQM150DY-HB Modulo IGBT 150A, HIGH POWER SWITCHING, MARCA MITSUBISHI
CK158 9Y9412                   Módulo de protección de Varistor, generador rectificadorCK158 9Y9412 Módulo de protección de Varistor, generador rectificador
FGA60N65SMD                  Transistor IGBT 650V, 60A, 300W, Marca OnsemFGA60N65SMD Transistor IGBT 650V, 60A, 300W, Marca Onsem
BUX87P, NPN Bipolar Transistor, 0.5A 450V HFE:26V Power, 3-Pin SBUX87P, NPN Bipolar Transistor, 0.5A 450V HFE:26V Power, 3-Pin S
7MBR75U4B-120-50       Modulo IGBT 75A, 1200V, marca Fuji Electric7MBR75U4B-120-50 Modulo IGBT 75A, 1200V, marca Fuji Electric
LS411660                   Modulo Pack Diodo 600A, 1600V, 2 pines, PowerexLS411660 Modulo Pack Diodo 600A, 1600V, 2 pines, Powerex
SKBPC5010                  Diodo puente Rectificador, 50A, 1000V, DC ComponetsSKBPC5010 Diodo puente Rectificador, 50A, 1000V, DC Componets
FF450R12ME4                      Módulo IGBT 450A, 1200V, InfineonFF450R12ME4 Módulo IGBT 450A, 1200V, Infineon
FF300R12KT4       IGBT Modules IGBT 1200V 300AFF300R12KT4 IGBT Modules IGBT 1200V 300A
MG75Q2YS50       Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsMG75Q2YS50 Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
CM200DU-24H      MODULO IGBT Half Bridge 1200V 200A 1130WCM200DU-24H MODULO IGBT Half Bridge 1200V 200A 1130W
2SC3858      Transistor NPN 200V 17A 200W 20MHz MT2002SC3858 Transistor NPN 200V 17A 200W 20MHz MT200
DSEI2X31-10B 1000V    fast recovery epitaxial diode (FREDDSEI2X31-10B 1000V fast recovery epitaxial diode (FRED

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