What's In My Cart?

..
  Product Stock Qty
SK60GB128 IGBT, 1200V, 63A, DUALSK60GB128 IGBT, 1200V, 63A, DUAL
TG25C60 TRIAC Montaje de chasis 25A, 600V, Marca: SanrexTG25C60 TRIAC Montaje de chasis 25A, 600V, Marca: Sanrex
MDD56-16N1B Modulo doble diodo 71A, 1600V, TO240AA, marca IXYSMDD56-16N1B Modulo doble diodo 71A, 1600V, TO240AA, marca IXYS
SSR-48150 Rele stado solido 150A, 24-480VAC, Switching Voltage: 4 to 32 VdcSSR-48150 Rele stado solido 150A, 24-480VAC, Switching Voltage: 4 to 32 Vdc
2MBI300S-120 Modulo IGBT 1200V, 300A, 2 in one-package, Fuji Electric2MBI300S-120 Modulo IGBT 1200V, 300A, 2 in one-package, Fuji Electric
CD431690B MODULO TIRISTOR/TIRISTOR 90A(It(av)), 1600V(Vrrm/Vdrm)CD431690B MODULO TIRISTOR/TIRISTOR 90A(It(av)), 1600V(Vrrm/Vdrm)
KBPC2501 Puente rectificador unifase, 100V, 25A, THTKBPC2501 Puente rectificador unifase, 100V, 25A, THT
T1329N22TOF Phase Control SCRs, T1329N SeriesT1329N22TOF Phase Control SCRs, T1329N Series
KP1200 1800V Thyristor Phase control, tipo capsula, 1200A, 1800V, 74x26mm, TechSemKP1200 1800V Thyristor Phase control, tipo capsula, 1200A, 1800V, 74x26mm, TechSem
MMO62-12IO6 Módulo: tiristores; push-pull; 1,2kV; 30A; SOT227B; Ufmax: 1,29VMMO62-12IO6 Módulo: tiristores; push-pull; 1,2kV; 30A; SOT227B; Ufmax: 1,29V
2MBI450U4E-120 Modulo IGBT Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, Marca: Fuji Electric2MBI450U4E-120 Modulo IGBT Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, Marca: Fuji Electric
CM150DY-12NF Modulo IGBT Transistor 150A, 1,7V, 590W, marca MitsubishiCM150DY-12NF Modulo IGBT Transistor 150A, 1,7V, 590W, marca Mitsubishi
MCD56-16IO1B Módulo thyristor & diodo 60A, 1600V, TO240AA, IXYSMCD56-16IO1B Módulo thyristor & diodo 60A, 1600V, TO240AA, IXYS
ESM2030DV Trans Darlington NPN 400V 67A 4-Pin ISOTOPESM2030DV Trans Darlington NPN 400V 67A 4-Pin ISOTOP
SKKH42/16E Diode/Thyristor Module SCR SCR, 40A 1600VSKKH42/16E Diode/Thyristor Module SCR SCR, 40A 1600V
FS100R12KT4G Módulos IGBT N-CH 100A, 1200V, Marca: InfineonFS100R12KT4G Módulos IGBT N-CH 100A, 1200V, Marca: Infineon
SKIIP25AC126V1 Módulo IGBT, transistor/transistor, 1200V, 55AMP, SemikronSKIIP25AC126V1 Módulo IGBT, transistor/transistor, 1200V, 55AMP, Semikron
DF60LA80 MODULO RECTIFICADOR PUENTE TRIFASICO 800V, 60ADF60LA80 MODULO RECTIFICADOR PUENTE TRIFASICO 800V, 60A
P846A6902 Modulo IGBT, inverter diodo PIM, marca VincotechP846A6902 Modulo IGBT, inverter diodo PIM, marca Vincotech
VLA517-01R VLA517-01R - Arreglo & Módulo de Transistor IGBT, Canal N, 4 A, SIPVLA517-01R VLA517-01R - Arreglo & Módulo de Transistor IGBT, Canal N, 4 A, SIP
C398PD SCR, TO-200AC, 1400V, 650A, TQ=40C398PD SCR, TO-200AC, 1400V, 650A, TQ=40
96.04SMA Base Relay 8 Pines, destino 56.34, Montaje DIN96.04SMA Base Relay 8 Pines, destino 56.34, Montaje DIN
PSD125/12 Power Semiconductors 3-phase Bridge Rectifier, 166A 1200V, 5-PinPSD125/12 Power Semiconductors 3-phase Bridge Rectifier, 166A 1200V, 5-Pin
95.05.SMA Base Relay 10A, 250VCA, Montaje DIN95.05.SMA Base Relay 10A, 250VCA, Montaje DIN
SKM100GB128D Transistor IGBT 1200V, 145A, SEMITRANS2, marca SemikronSKM100GB128D Transistor IGBT 1200V, 145A, SEMITRANS2, marca Semikron
IPW60R041C6FKSA1 Transistor N-MOSFET, unipolar, 600V, 77.5A, 481WIPW60R041C6FKSA1 Transistor N-MOSFET, unipolar, 600V, 77.5A, 481W
MY2 24VDC (S) Relé encapsulado DPDT, Bobina 24VDC, 8 pines, marca OmronMY2 24VDC (S) Relé encapsulado DPDT, Bobina 24VDC, 8 pines, marca Omron
SKVC20A460C Varistor (Zno) 460VAC, 615VDC, marca SemikronSKVC20A460C Varistor (Zno) 460VAC, 615VDC, marca Semikron
SKT24/16E Thyristor 1600V, 22A, 100 (Min)A, 3-PinesSKT24/16E Thyristor 1600V, 22A, 100 (Min)A, 3-Pines
FF400R12KT3 Módulos IGBT N-CH 1.2KV 580A InfineonFF400R12KT3 Módulos IGBT N-CH 1.2KV 580A Infineon
VUO82-16NO7 Diode Rectificadores en puente 3PHS RECT BRIDGE 1600VVUO82-16NO7 Diode Rectificadores en puente 3PHS RECT BRIDGE 1600V
..

Cotizar Por WhatsApp

Checkout
LH.pe
Telefono