BSS84 Transistor metal-oxido-semiconductor de efecto de campo (M

  • FABRICANTE:
  • PART# Model:BSS84
  • STOCK:50
  • COTIZAR: BSS84
  • PRECIO:-
BSS84 Transistor metal-oxido-semiconductor de efecto de campo (M

DESCRIPCIÓN

Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SOT-23 P-CH ENHANCE

FICHA TECNICA
Data Sheet BSS 

PRODUCTOS RELACIONADOS QUE LE PODRíAN GUSTAR

IRFI4020H-117P Transistor: N-MOSFET x2; unipolar; 200V; 9,1A; 21W; TO220FP-5
IRFI4020H-117P Transistor: N-MOSFET x2; unipolar; 200V; 9,1A; 21W; TO220FP-5
Ver
70TPS16PBF Thyristor; 1,6kV; 70A; 75A; 100mA; Empaquetado: tubo; THT; SUPER247
70TPS16PBF Thyristor; 1,6kV; 70A; 75A; 100mA; Empaquetado: tubo; THT; SUPER247
Ver
STGW39NC60VD Transistor: IGBT; 600V; 80A; 250W; TO247
STGW39NC60VD Transistor: IGBT; 600V; 80A; 250W; TO247
Ver
BTB24-800BW Triac 25A, 800V, 50mA, TO220AB
BTB24-800BW Triac 25A, 800V, 50mA, TO220AB
Ver
IRFI4212H-117P Transistor: N-MOSFET x2; unipolar; 100V; 11A; 18W; TO220FP-5
IRFI4212H-117P Transistor: N-MOSFET x2; unipolar; 100V; 11A; 18W; TO220FP-5
Ver
IRF9520SPBF Transistor: P-MOSFET; unipolar; -100V; -4.8A; 60W; D2PAK
IRF9520SPBF Transistor: P-MOSFET; unipolar; -100V; -4.8A; 60W; D2PAK
Ver
HGTG10N120BND Transistor 35A, 1200V, NPT Series N-Channel IGBT
HGTG10N120BND Transistor 35A, 1200V, NPT Series N-Channel IGBT
Ver
STA413A Bipolar (BJT) Transistor Array 4 NPN (Quad) 35V 3A 4W
STA413A Bipolar (BJT) Transistor Array 4 NPN (Quad) 35V 3A 4W
Ver
Telefono