MG50Q2YS50 GTR Module Silicon N Channel IGBT High Power Switchin

  • FABRICANTE: Mitsubishi Electric
  • PART# Model:MG50Q2YS50
  • STOCK:4
  • COTIZAR: MG50Q2YS50
  • PRECIO:-
MG50Q2YS50 GTR Module Silicon N Channel IGBT High Power Switchin

DESCRIPCIÓN

GTR Module Silicon N Channel IGBT High Power 

FICHA TECNICA
Data Sheet MG50 

RELATED PRODUCTS YOU MIGHT LIKE

MCC44-16io1B Módulo Doble Thyristor 1600V, 49A, TO-240AA, 100mA
MCC44-16io1B Módulo Doble Thyristor 1600V, 49A, TO-240AA, 100mA
View
A50L-1-0125A 50A POWER TRANSISTOR MODULE 50A, 600V, FUJI ELECTRIC
A50L-1-0125A 50A POWER TRANSISTOR MODULE 50A, 600V, FUJI ELECTRIC
View
MTC60-16 Modulo Pack doble Thyristor 60A; 1600V
MTC60-16 Modulo Pack doble Thyristor 60A; 1600V
View
TD75N16KOF Modulo Thyristor / Diodo
TD75N16KOF Modulo Thyristor / Diodo
View
FS225R12KE3 MODULE IGBT TRIFASICO 225A 1200V
FS225R12KE3 MODULE IGBT TRIFASICO 225A 1200V
View
MPJC2CA100U60 Módulo Diodo ultraFast 100A; 600V; Marca: Magnechip
MPJC2CA100U60 Módulo Diodo ultraFast 100A; 600V; Marca: Magnechip
View
KS524575 Darlington Transistor Module (75 Amperes/600 Volts),
KS524575 Darlington Transistor Module (75 Amperes/600 Volts),
View
7MBR75SB060-70 MODULO IGBT 75A, 600V, N-CHANNEL
7MBR75SB060-70 MODULO IGBT 75A, 600V, N-CHANNEL
View
Telefono