MCO500-16IO1 Thyristor Effective load current I(T) 560 A Peak reverse voltage U(DRM) 1600 V

  • FABRICANTE: IXYS Corporation
  • PART# Model:MCO500-16IO1
  • STOCK:3
  • COTIZAR: MCO500-16IO1
  • PRECIO:-
MCO500-16IO1 Thyristor Effective load current I(T) 560 A Peak reverse voltage U(DRM) 1600 V

DESCRIPCIÓN

Thyristor Effective load current I(T) 560 A Peak reverse voltage U(DRM) 1600 V

FICHA TECNICA
Data Sheet MCO500 

PRODUCTOS RELACIONADOS QUE LE PODRíAN GUSTAR

PD10016 Rectifier Diode, 1 Phase, 2 Element, 100A, 1600V V(RRM), Silicon
PD10016 Rectifier Diode, 1 Phase, 2 Element, 100A, 1600V V(RRM), Silicon
Ver
SKKQ800/14E Módulo Thyristor/Thyristor, push-pull, 1.4kV, 800A, C12, SEMISTART2
SKKQ800/14E Módulo Thyristor/Thyristor, push-pull, 1.4kV, 800A, C12, SEMISTART2
Ver
FZ600R12KE3 Modulo IGBT 600Amp 1200Volt
FZ600R12KE3 Modulo IGBT 600Amp 1200Volt
Ver
SKVC20A460C Varistor (Zno) 460VAC, 615VDC, marca Semikron
SKVC20A460C Varistor (Zno) 460VAC, 615VDC, marca Semikron
Ver
7MBR50SB060-03 Power Transistor Module
7MBR50SB060-03 Power Transistor Module
Ver
SKiiP 23NAB126V10 Modulo IGBT MiniSKiip; Trench gate IGBT Module; 1200V; 50A
SKiiP 23NAB126V10 Modulo IGBT MiniSKiip; Trench gate IGBT Module; 1200V; 50A
Ver
MG50J6ES50 MODULO TRANSISTOR POWER 50A, 600V
MG50J6ES50 MODULO TRANSISTOR POWER 50A, 600V
Ver
SEMiX453GAL12E4s IGBT Half-Bridge Ultrarrápido, 683A, 1200V, SEMITRANS
SEMiX453GAL12E4s IGBT Half-Bridge Ultrarrápido, 683A, 1200V, SEMITRANS
Ver
Telefono