RM50HG-12S Modulo HIGH 600 Volt, 50 Ampere

  • FABRICANTE: Mitsubishi Electric
  • PART# Model:RM50HG-12S
  • STOCK:20
  • COTIZAR: RM50HG-12S
  • PRECIO:-
RM50HG-12S Modulo HIGH 600 Volt, 50 Ampere

DESCRIPCIÓN

Modulo HIGH SPEED SWITCHING 600 Volt, 50 Ampere Super Fast. Recovery Single Diode. Current Rating. Voltage. Type. Amperes. Volts 

FICHA TECNICA
Data Sheet RM50HG-12S 

PRODUCTOS RELACIONADOS QUE LE PODRíAN GUSTAR

LD242 TO-18 Metal Package, half angle ±40°, typ. 2.5 (6.0) mW/sr
LD242 TO-18 Metal Package, half angle ±40°, typ. 2.5 (6.0) mW/sr
Ver
IRFBC40APBF MOSFET N-CH 600V HEXFET MOSFET
IRFBC40APBF MOSFET N-CH 600V HEXFET MOSFET
Ver
4N35 Transistor Output Optocouplers Phototransistor Out
4N35 Transistor Output Optocouplers Phototransistor Out
Ver
STGW60V60DF Transistor IGBT, 600V, 60A, 375W, TO247-3
STGW60V60DF Transistor IGBT, 600V, 60A, 375W, TO247-3
Ver
IRFPC40PBF Transistor N-MOSFET, unipolar, 600V, 4.3A, 150W
IRFPC40PBF Transistor N-MOSFET, unipolar, 600V, 4.3A, 150W
Ver
IHW40N120R5XKSA1 Transistor IGBT, TRENCHSTOP™ RC, 1.2kV, 40A, 197W
IHW40N120R5XKSA1 Transistor IGBT, TRENCHSTOP™ RC, 1.2kV, 40A, 197W
Ver
IRFBE30 Transistor Amps: 4.1A Voltage: 800V Package: TO-220AB
IRFBE30 Transistor Amps: 4.1A Voltage: 800V Package: TO-220AB
Ver
FMMT591TA Diodes Incorporated Transistors Bipolar - BJT PNP Med
FMMT591TA Diodes Incorporated Transistors Bipolar - BJT PNP Med
Ver
Telefono