WMK25N80M3 Transistor N-MOSFET, WMOS M3, unipolar, 800V, 21A, 250W

  • FABRICANTE: Vishay/Siliconix
  • PART# Model:WMK25N80M3
  • STOCK:10
  • COTIZAR: WMK25N80M3
  • PRECIO:-
WMK25N80M3 Transistor N-MOSFET, WMOS M3, unipolar, 800V, 21A, 250W

DESCRIPCIÓN

Transistor N-MOSFET, WMOS™ M3, unipolar, 800V, 21A, 250W, TO220-3, marca Wayon.

Manufacturer WAYON
Type of transistor N-MOSFET
Technology WMOS™ M3
Polarisation unipolar
Drain-source voltage 800V
Drain current 21A
Power dissipation 250W
Case TO220-3
Gate-source voltage ±30V
On-state resistance 260mΩ
Mounting THT
Kind of package tube
Kind of channel enhanced
Heatsink thickness 1.2...1.45mm

 

FICHA TECNICA
Data Sheet WMx25N80M3 

PRODUCTOS RELACIONADOS QUE LE PODRíAN GUSTAR

DSEI60-12A Diodo rectificador 1200V, 52A, THT, 40ns, TO247AD, marca IXYS Corporation.
DSEI60-12A Diodo rectificador 1200V, 52A, THT, 40ns, TO247AD, marca IXYS Corporation.
Ver
SGT40N60NPFDPN TRANSISTOR IGBT 40N60NPFD 600V. 40A.
SGT40N60NPFDPN TRANSISTOR IGBT 40N60NPFD 600V. 40A.
Ver
ILQ620GB Transistor Output Optocouplers
ILQ620GB Transistor Output Optocouplers
Ver
GT25Q101 N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPL
GT25Q101 N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPL
Ver
2SC3858 Transistor NPN 200V 17A 200W 20MHz MT200 SANKEN
2SC3858 Transistor NPN 200V 17A 200W 20MHz MT200 SANKEN
Ver
BTA41-800B Triac 800V, 40A, TOP3, Igt: 50/70mA
BTA41-800B Triac 800V, 40A, TOP3, Igt: 50/70mA
Ver
RJH60D2D Transistor IGBT Chip N-CH 600V 25A 34000mW 3-Pin(3+Tab) TO-220FL
RJH60D2D Transistor IGBT Chip N-CH 600V 25A 34000mW 3-Pin(3+Tab) TO-220FL
Ver
FGH60T65SHD Transistores IGBT FS3TIGBT TO247 60A 650V
FGH60T65SHD Transistores IGBT FS3TIGBT TO247 60A 650V
Ver
Telefono